Removal mechanism of SiCf/SiC composite materials via millisecond laser processing
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Graphical Abstract
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Abstract
To establish the mechanism of millisecond laser processing of SiCf/SiC ceramic matrix composites, and to support the design and optimization of millisecond laser processing techniques, this paper conducted experimental and simulation studies. The research focused on the ablation threshold of millisecond laser processing of SiCf/SiC ceramic matrix composites and laser scribing experiments, investigating the removal mechanism of these materials. By measuring scribing width, depth, and thermally affected zone thickness, the study revealed the removal mechanism of millisecond laser processing of SiCf/SiC ceramic matrix composites and the influence of different laser process parameters on processing outcomes. The results indicate that effective ablation processing of SiCf/SiC ceramic matrix composites can be achieved at a laser processing speed of 1 mm/s; the ablation threshold for SiCf/SiC ceramic matrix composites is approximately Φth = 0.013 J/ cm2. The increasing laser energy density results in higher processing depth, width, and thermal affected zone thickness, with depth showing the most significant increase, approximately 1870.07 μm. Increasing the equivalent pulse number enhances processing depth and width, but reduces the thermal affected zone thickness by approximately 6.0 μm.
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